Silicon carbide trench semiconductor device

An apparatus, comprising:

• a silicon carbide substrate heavily doped with the first conductivity type;
• a lightly doped silicon carbide drift region of the first conductivity type over the silicon carbide substrate;
• a first body region in the drift region doped with second conductivity type wherein the second conductivity type is the opposite of the first conductivity type;
• a first source region in the first body region heavily doped with the first conductivity type;
• and
• a gate trench formed in the first source region and first body region wherein at least one sidewall of the gate trench is parallel to a crystal plane of the silicon carbide structure having higher carrier mobility than a C-face of the silicon carbide structure and wherein the gate trench extends a length of the first body region and the source region to a separation region laterally adjacent to the first body region wherein the separation region is in the drift region.