Semiconductor device

A semiconductor device comprising:

• a semiconductor layer having a main surface and configured to generate a channel close to the main surface along one direction of the main surface;
• a source region;
• a drain region, wherein the source region and the drain region are disposed in a surface layer of the semiconductor layer, and a portion where the channel is generated is disposed between the source region and the drain region;
• a gate electrode disposed above the channel and along the one direction;
• a first electrode connected to a region of the main surface corresponding to the source region;
• and
• a second electrode connected to a region of the main surface corresponding to the drain region, wherein
• the first electrode has a plurality of first contacts connected to the region of the main surface corresponding to the source region,
• the second electrode has a plurality of second contacts connected to the region of the main surface corresponding to the drain region,
• the one direction is defined as a gate width direction of the gate electrode,
• the plurality of first contacts are arranged in a row along the gate width direction, and
• the plurality of second contacts are arranged in a row along the gate width direction.