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US 2021/0242317 A1Published application
Self-aligned contact
AssigneeGlobalFoundries U.S. Inc.
InventorsSipeng GU, Jiehui SHU, Haiting WANG, Yanping SHEN
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to self-aligned contacts and methods of manufacture. The structure includes: adjacent diffusion regions located within a substrate material; sidewall structures above an upper surface of the substrate material, aligned on sides of the adjacent diffusion regions; and a contact between the sidewall structures and extending to within the substrate material between and in electrical contact with the adjacent diffusion regions.
Claims20
A structure comprising:
- adjacent diffusion regions located within a substrate material;
- sidewall structures above an upper surface of the substrate material, aligned on sides of the adjacent diffusion regions;
- and
- a contact between the sidewall structures and extending to within the substrate material between and in electrical contact with the adjacent diffusion regions.
1 more element
A structure comprising:
- a source/drain region in a substrate;
- a pair of outer spacers above the source/drain region;
- and
- a contact to the source/drain region located between the pair of outer spacers and extending to below a surface of the substrate.
1 more element
A structure comprising:
- a substrate;
- a first gate structure over the substrate;
- a second gate structure over the substrate and spaced apart from the first gate structure;
- a first source/drain region adjacent to the first gate structure and between the first gate structure and the second gate structure;
- a second source/drain region adjacent to the second gate structure and between the first gate structure and the second gate structure;
- and
- a contact extending into the substrate and making contact with the first source/drain region and the second source/drain region.
4 more elements
Dependencies are inferred from the claim text.