Semiconductor Die and Method of Manufacturing the Same

A semiconductor wafer, comprising:

• a semiconductor body comprising a first active region and a second active region;
• an insulation layer on the semiconductor body;
• a dicing region formed laterally between the first active region and the second active region;
• a first sodium stopper and a second sodium stopper formed in the insulation layer,
• wherein the first sodium stopper is arranged in a first insulation layer groove which intersects the insulation layer vertically and extends around the first active region,
• wherein the second sodium stopper is arranged in a second insulation layer groove which intersects the insulation layer vertically and extends around the second active region,
• wherein the first sodium stopper is formed of a tungsten material filling the first insulation layer groove,
• wherein the second sodium stopper is formed of a tungsten material filling the second insulation layer groove.

A method for manufacturing a semiconductor die, the method comprising:

• forming an active region in a semiconductor body;
• forming an insulation layer on the semiconductor body;
• and
• forming a sodium stopper in the insulation layer,
• wherein forming the sodium stopper comprises:
• etching an insulation layer groove into the insulation layer such that the insulation layer groove intersects the insulation layer vertically and extends around the active region;
• and
• filling the insulation layer groove with a tungsten material.

A method for manufacturing a semiconductor wafer, the method comprising:

• forming a first active region and a second active region in a semiconductor body;
• forming an insulation layer on the semiconductor body;
• forming a dicing region laterally between the first active region and the second active region;
• forming a first sodium stopper and a second sodium stopper in the insulation layer,
• wherein forming the first sodium stopper and the second sodium stopper comprises:
• etching a first insulation layer groove into the insulation layer such that the first insulation layer groove intersects the insulation layer vertically and extends around the first active region;
• etching a second insulation layer groove into the insulation layer such that the second insulation layer groove intersects the insulation layer vertically and extends around the second active region;
• and
• filling the first insulation layer groove and the second insulation layer groove with a tungsten material.