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AssigneesCommissariat A L'energie Atomique Et Aux Energies Alternatives, Centre National De La Recherche Scientifique
InventorsEtienne EUSTACHE, Bassem SALEM, Jean-Michel HARTMANN, Franck BASSANI, Mohamed-Aymen MAHJOUB
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A method for the nanoscale etching of a layer of Ge1-xSnx on a carrier for a FET transistor, x being the concentration of tin in the GeSn alloy, the etching method includes a step of plasma-etching the layer of Ge1-xSnx using a mixture comprising dichlorine (Cl2) and dinitrogen (N2) and under an etching pressure lower than or equal to 50 mTorr, preferably lower than or equal to 10 mTorr. A method for producing a conduction channel on a carrier for a FET transistor, comprising a step of forming a layer of Ge1-xSnx on the carrier, the layer being produced by epitaxial growth, and a step of etching the layer of Ge1-xSnx according to the etching method. A conduction channel made of Ge1-xSnx for a FET transistor, the channel being obtained according to the production method, and a FET transistor comprising a plurality of conduction channels made of Ge1-xSnx.
A method for the nanoscale etching of a layer of Ge1-xSnx on a carrier for a FET transistor, x being the concentration of tin and being substantially lower than 30%, the etching method comprising:
d according to the production method of claim 9, the etch bottom of the carrier around the etched layer of Ge1-xSnx being smooth, i.e. exhibiting a surface roughness lower than 2 nanometres, preferably lower than 0.5 nanometre.
A conduction channel made of Ge1-xSnx for a FET transistor, the channel being
Dependencies are inferred from the claim text.