Performance sic diodes
AssigneeGeneSiC Semiconductor Inc.
InventorsSiddarth Sundaresan, Ranbir Singh, Jaehoon Park
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Abstract
An embodiment relates to a semiconductor component, comprising a semiconductor body of a first conductivity type comprising a voltage blocking layer and islands of a second conductivity type on a contact surface and optionally a metal layer on the voltage blocking layer, and a first conductivity type layer comprising the first conductivity type not in contact with a gate dielectric layer or a source layer that is interspersed between the islands of the second conductivity type.
Claims20
A semiconductor component, comprising a semiconductor body of a first conductivity type comprising a voltage blocking layer;
- and islands of a second conductivity type on a contact surface;
- and a first conductivity type layer comprising the first conductivity type not in contact with a gate dielectric layer or a source layer that is interspersed between the islands of the second conductivity type.
A method, comprising:
- preparing a silicon carbide wafer comprising a N-drift layer formed on top of a N+ substrate;
- and forming an n-type layer, and
- fabricating a semiconductor component,
- wherein the n-type layer is formed such that it is completely buried within the N-drift layer.
Dependencies are inferred from the claim text.