Dual trench isolation structures
AssigneeGlobalFoundries U.S. Inc.
InventorsShiv Kumar MISHRA, Baofu ZHU, Arkadiusz MALINOWSKI, Kaushikee MISHRA
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AssigneeGlobalFoundries U.S. Inc.
InventorsShiv Kumar MISHRA, Baofu ZHU, Arkadiusz MALINOWSKI, Kaushikee MISHRA
Estimating the term…
The present disclosure generally relates to semiconductor structures and, more particularly, to dual trench isolation structures and methods of manufacture. The structure includes: a doped well region in a substrate; a dual trench isolation region within the doped well region, the dual trench isolation region comprising a first isolation region of a first depth and a second isolation region of a second depth, different than the first depth; and a gate structure on the substrate and extending over a portion of the dual trench isolation region.
A structure, comprising:
A structure, comprising:
A method, comprising:
Dependencies are inferred from the claim text.