Ferroelectric memories

A ferroelectric memory, comprising:

• a substrate;
• a first conductive layer disposed on the substrate;
• a patterned oxide layer disposed on the first conductive layer and the substrate, exposing a part of the first conductive layer;
• a second conductive layer disposed on the exposed first conductive layer and
• a ferroelectric layer disposed on the exposed first conductive layer and the second conductive layer;
• an antiferroelectric layer disposed on the second conductive layer and located on the ferroelectric layer;
• a third conductive layer disposed between the ferroelectric layer;
• and
• a conductive oxide layer disposed on the third conductive layer and between the antiferroelectric layer.

A method for fabricating a ferroelectric memory, comprising:

• providing a substrate;
• forming a first conductive layer on the substrate;
• forming a patterned oxide layer on the first conductive layer and the substrate, exposing a part of the first conductive layer;
• forming a second conductive layer on the exposed first conductive layer and the patterned oxide layer;
• forming a ferroelectric layer on the exposed first conductive layer and the second conductive layer;
• forming a conductive oxide layer between the ferroelectric layer;
• etching a part of the conductive oxide layer;
• forming a third conductive layer on the conductive oxide layer;
• and
• performing an annealing process, so that the ferroelectric layer surrounding the conductive oxide layer forms an antiferroelectric layer.

A method for fabricating a ferroelectric memory, comprising:

• providing a substrate;
• forming a first conductive layer on the substrate;
• forming a patterned oxide layer on the first conductive layer and the substrate, exposing a part of the first conductive layer;
• forming a second conductive layer on the exposed first conductive layer and the patterned oxide layer;
• forming a ferroelectric layer on the exposed first conductive layer and the second conductive layer;
• forming a third conductive layer between the ferroelectric layer;
• etching a part of the third conductive layer;
• forming a conductive oxide layer on the third conductive layer;
• and
• performing an annealing process, so that the ferroelectric layer surrounding the conductive oxide layer forms an antiferroelectric layer.