Back to results
US 2021/0242282 A1Published application
Method for fabricating memory device
AssigneeUnited Microelectronics Corp.
InventorsChung-Tse Chen, Ko-Chi Chen, Tzu-Yun Chang
Life of this patent
Estimating the term…
Abstract
A method for fabricating memory device is provided. The method includes forming a transistor on a substrate. Further, a contact structure is formed on a source/drain region of the transistor. A conductive layer is formed on the contact structure. Four memory structures are formed on the conductive layer to form a quadrilateral structure.
Claims11
A method for fabricating memory device, comprising:
- forming a transistor on a substrate;
- forming a contact structure on a source/drain region of the transistor;
- forming a conductive layer on the contact structure;
- and
- forming four memory structures on the conductive layer to form a quadrilateral structure.
2 more elements
Dependencies are inferred from the claim text.