GaN-BASED THRESHOLD SWITCHING DEVICE AND MEMORY DIODE
AssigneeArizona Board of Regents on behalf of Arizona State University
InventorsKai Fu, Houqiang Fu, Yuji Zhao
Life of this patent
Estimating the term…
Abstract
A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.
Claims11
A method for fabricating a switching device, the method comprising:
- depositing a first unintentionally doped GaN layer on a first surface of a GaN substrate;
- depositing a n+-GaN layer on the first unintentionally doped GaN layer;
- etching away a portion of the n+-GaN layer and a portion of the first unintentionally doped GaN layer to yield a first etched surface and a second etched surface on the first unintentionally doped GaN layer;
- regrowing a second unintentionally doped GaN layer on the first etched surface and the second etched surface of the first unintentionally doped GaN layer;
- regrowing a p-GaN layer on the second unintentionally doped GaN layer;
- etching away a portion of the p-GaN layer and the second unintentionally doped GaN layer to yield an etched surface on the n+-GaN layer;
- forming a first electrode on the etched surface of the n+-GaN layer;
- forming a second electrode on the p-GaN layer;
- and
- forming a third electrode on a second surface of the GaN substrate.
A method for fabricating a switching device, the method comprising:
- depositing a first unintentionally doped GaN layer on a first surface of a GaN substrate;
- etching away a portion of the first unintentionally doped GaN layer to yield an etched surface on the first unintentionally doped GaN layer;
- regrowing a second unintentionally doped GaN layer on the etched surface of the first unintentionally doped GaN layer;
- regrowing a p-GaN layer on the second unintentionally doped GaN layer;
- forming a first electrode on the p-GaN layer;
- and
- forming a second electrode on a second surface of the GaN substrate.
11-20. (canceled)
Dependencies are inferred from the claim text.