Image sensor structure and method of forming the same

Abstract

An image sensor structure has a visible light detection region and an infrared light detection region neighboring the visible light detection region. The image sensor structure includes a semiconductor substrate, photo sensing members, an infrared absorption enhancing member, a color filter and an infrared pass filter. The semiconductor substrate has a front side and a back side opposite to each other. The first photo sensing member is disposed in the front side of the semiconductor substrate. The infrared absorption enhancing member is in the back side of the semiconductor substrate and only in the infrared light detection region. The color filter is over the back side of the semiconductor substrate and in the visible light detection region. The infrared pass filter is over the infrared absorption enhancing member.

Dependencies are inferred from the claim text.