Solid-state imaging device and solid-state imaging apparatus
AssigneeSony Semiconductor Solutions Corporation
InventorHironobu FUKUI
Life of this patent
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Abstract
A solid-state imaging device including: a semiconductor substrate having a first surface and a second surface opposed to each other, and including a photoelectric converter provided for each of pixel regions; an impurity diffusion region provided, for each of the pixel regions, in proximity to the first surface of the semiconductor substrate; and a contact electrode embedded in the semiconductor substrate from the first surface, and provided over and in contact with the impurity diffusion regions each provided for each of the pixel regions adjacent to each other.
Claims15
A solid-state imaging device comprising:
- a semiconductor substrate having a first surface and a second surface opposed to each other, and including a photoelectric converter provided for each of pixel regions;
- an impurity diffusion region provided, for each of the pixel regions, in proximity to the first surface of the semiconductor substrate;
- and
- a contact electrode embedded in the semiconductor substrate from the first surface, and provided over and in contact with the impurity diffusion regions each provided for each of the pixel regions adjacent to each other.
A solid-state imaging apparatus provided with a solid-state imaging device, the solid-state imaging device comprising:
- a semiconductor substrate having a first surface and a second surface opposed to each other, and including a photoelectric converter provided for each of pixel regions;
- an impurity diffusion region provided, for each of the pixel regions, in proximity to the first surface of the semiconductor substrate;
- and
- a contact electrode embedded in the semiconductor substrate from the first surface, and provided over and in contact with the impurity diffusion regions each provided for each of the pixel regions adjacent to each other.
Dependencies are inferred from the claim text.