Electro-optical device and electronic apparatus

Abstract

In an electro-optical device, in an interlayer insulating layer provided in a layer between a transistor and a scanning line, a first opening and a second opening are respectively provided on both sides of a semiconductor layer in plan view, and a portion of a gate electrode is provided inside each of the first opening and the second opening. Therefore, the gate electrode configures a light shielding wall inside each of the first opening and the second opening. Of the first opening and the second opening, the first opening is provided at a position overlapping with the scanning line in plan view, and the gate electrode is electrically connected to the scanning line via the first opening. The second opening is provided at a position that does not overlap with the scanning line in plan view. Thus, the width of the scanning line can be made narrower.

Dependencies are inferred from the claim text.