Integrated Assemblies Having Ferroelectric Transistors with Heterostructure Active Regions

An integrated assembly, comprising:

• a ferroelectric transistor;
• the ferroelectric transistor comprising a vertically-extending active region which includes a first source/drain region, a second source/drain region, and a body region between the first and second source/drain regions;
• the body region comprising a different semiconductor composition than either of the first and second source/drain regions;
• the active region having a pair of opposing sidewalls along a cross-section;
• an insulative material along each of the opposing sidewalls;
• a ferroelectric material adjacent the insulative material;
• a conductive gate material adjacent the ferroelectric material;
• a portion of the active region overlapped by the conductive gate material being a gated portion of the active region;
• the semiconductor composition of the body region transitioning to the semiconductor composition of one of the source/drain regions along an abrupt transition region;
• the abrupt transition region being within the gated portion of the active region;
• and
• the semiconductor composition of the body region transitioning to the semiconductor composition of the other of the source/drain regions along a graded transition region.

A method of forming an integrated assembly, comprising:

• forming a ferroelectric transistor comprising a vertically-extending active region which includes a first source/drain region, a second source/drain region, and a body region between the first and second source/drain regions, the body region comprising a different semiconductor composition than either of the first and second source/drain regions;
• the source/drain regions being heavily doped to a first conductivity type;
• the different semiconductor composition of the body region relative to the first and second source/drain regions enabling replenishment of carrier of a second conductivity type within the body region through inter-band tunneling between the body region and the source/drain regions;
• one of the first and second conductivity types being n-type and the other being p-type;
• forming a first comparative digit line coupled with the first source/drain region;
• and
• forming a second comparative digit line coupled with the second source/drain region.