Buried Metal Track and Methods Forming Same

An integrated circuit comprising:

• a first semiconductor fin and a second semiconductor fin parallel to each other;
• and
• a transistor comprising:
• a gate stack on both of the first semiconductor fin and the second semiconductor fin;
• a first source/drain region on a side of the gate stack, wherein the first source/drain region is joined to a first part of the first semiconductor fin;
• and
• a buried conductive track parallel to the first semiconductor fin and the second semiconductor fin, wherein the buried conductive track is lower than the first semiconductor fin, and is electrically connected to the transistor.

An integrated circuit comprising:

• an isolation region;
• a first semiconductor strip and a second semiconductor strip parallel to each other, wherein the first semiconductor strip and the second semiconductor strip are in the isolation region;
• a buried metal track between the first semiconductor strip and the second semiconductor strip;
• and
• a first semiconductor fin and a second semiconductor fin overlapping the first semiconductor strip and the second semiconductor strip, respectively.