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US 2021/0242211 A1Published application
Semiconductor device having buried word line and method of manufacturing the same
AssigneeNanya Technology Corporation
InventorCHIH-WEI HUANG
Life of this patent
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Abstract
The present disclosure provides a semiconductor device. The semiconductor device can be a recessed access device (RAD) transistor, which includes a substrate, a word line disposed in the substrate and surrounded by a dielectric liner, an isolation layer disposed in the substrate to cap the word line, and an insulative plug penetrating through the isolation layer and extending into the word line.
Claims19
A semiconductor device, comprising:
- a substrate;
- a word line disposed in the substrate;
- a dielectric liner disposed between the substrate and the word line;
- an isolation layer disposed in the substrate to cap the word line;
- and
- an insulative plug penetrating through the isolation layer and extending into the word line.
3 more elements
A method of manufacturing a semiconductor device, comprising:
- creating at least one trench in a substrate;
- depositing a conductive material to partially fill the trench;
- and
- forming an insulative piece in the trench and extending into the conductive material.
1 more element
Dependencies are inferred from the claim text.