Memory device
AssigneeSK hynix Inc.
InventorKi Hong LEE
Life of this patent
Estimating the term…
Abstract
A memory cell includes a bit line and a plate line that are spaced apart from each other and vertically oriented in a first direction; a transistor provided with an active region that is laterally oriented in a second direction crossing the bit line and includes a first active cylinder, a second active cylinder, and at least one channel portion oriented laterally between the first active cylinder and the second active cylinder; a word line extending in a third direction while surrounding the at least one channel portion of the active region; and a capacitor oriented laterally in the second direction between the active region and the plate line.
Claims18
A memory cell, comprising:
- a bit line and a plate line spaced apart from each other and vertically oriented in a first direction;
- a transistor provided with an active region laterally oriented in a second direction to cross the bit line and including a first active cylinder, a second active cylinder, and at least one channel portion oriented laterally between the first active cylinder and the second active cylinder;
- a word line extending in a third direction while surrounding the at least one channel portion of the active region;
- and
- a capacitor oriented laterally in the second direction between the active region and the plate line.
Dependencies are inferred from the claim text.