Semiconductor device and method for manufacturing the semiconductor device

A semiconductor device comprising:

• a first conductor;
• a second conductor;
• a third conductor;
• a fourth conductor;
• a fifth conductor;
• a first insulator;
• a second insulator;
• and
• a first oxide,
• wherein the first insulator is over the first conductor,
• wherein the first oxide is over the first insulator,
• wherein a first opening that reaches the first conductor is provided in the first insulator and the first oxide,
• wherein the second conductor and the third conductor isolated from each other are over the first oxide,
• wherein at least part of the third conductor overlaps with the first opening and is in contact with a top surface of the first conductor,
• wherein the second insulator is over the first oxide,
• wherein the fourth conductor is over the second insulator, and
• wherein the fifth conductor is over the third conductor so as to at least partly overlap with the first opening and the first conductor.

A method for manufacturing a semiconductor device comprising a first conductor to a fourth conductor, a first insulator to a third insulator, and a first oxide, comprising:

• forming the first conductor;
• depositing the first insulator and a first oxide film over the first conductor;
• forming a first opening that reaches the first conductor in the first insulator and the first oxide film;
• depositing a first conductive film over the first oxide film;
• processing the first oxide film and the first conductive film into island shapes to form the first oxide and an island-shaped first conductive film;
• depositing the third insulator over the island-shaped first conductive film;
• forming a second opening that reaches the island-shaped first conductive film in the third insulator;
• removing a region of the island-shaped first conductive film overlapping with the second opening to form the second conductor and the third conductor;
• depositing a first insulating film and a third conductive film over the first oxide and the third insulator;
• and
• removing part of the first insulating film and part of the third conductive film until a top surface of the third insulator is exposed to form the second insulator and the fourth conductor.

A method for manufacturing a semiconductor device comprising a first conductor to a fifth conductor, a first insulator to a third insulator, and a first oxide, comprising:

• forming the first conductor;
• depositing the first insulator and a first oxide film over the first conductor;
• forming a first opening that reaches the first conductor in the first insulator and the first oxide film;
• depositing a first conductive film over the first oxide film by a sputtering method;
• depositing a second conductive film over the first conductive film by an ALD method or a CVD method;
• removing part of the second conductive film until a top surface of the first conductive film is exposed to form the fifth conductor;
• processing the first oxide film and the first conductive film into island shapes to form the first oxide and an island-shaped first conductive film;
• depositing the third insulator over the first insulator, the first oxide, and the island-shaped first conductive film;
• forming a second opening that reaches the island-shaped first conductive film in the third insulator;
• removing a region of the island-shaped first conductive film overlapping with the second opening to form the second conductor and the third conductor;
• depositing a first insulating film and a third conductive film over the third insulator;
• and
• removing part of the first insulating film and part of the third conductive film until a top surface of the third insulator is exposed to form the second insulator and the fourth conductor.