US 2021/0242174 A1 · MULTI-HEIGHT INTERCONNECT STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS

Abstract

Systems and methods for multi-height interconnect structures for a semiconductor device are provided herein. The multi-height interconnect structure generally includes a primary level semiconductor die having a primary conductive pillar and a secondary conductive pillar, where the primary conductive pillar has a greater height than the secondary conductive pillar. The semiconductor device may further include a substrate electrically coupled to the primary level semiconductor die through the primary conductive pillar and a secondary level semiconductor die electrically coupled to the primary level semiconductor die through the secondary conductive pillar. The multi-height pillars may be formed using a single photoresist mask or multiple photoresist masks. In some configurations, the primary and secondary conductive pillars may be arranged on only the front-side of the dies and/or substrate.

Claims19

Dependent claims

A semiconductor device, comprising:

a primary level semiconductor die having a primary conductive pillar and a secondary conductive pillar, the primary conductive pillar having a greater height than the secondary conductive pillar;
a substrate electrically coupled to the primary level semiconductor die by the primary conductive pillar;
and
a secondary level semiconductor die electrically coupled to the primary level semiconductor die through the secondary conductive pillar,
wherein the distance between the primary level semiconductor die and the substrate is greater than the distance between the primary level semiconductor die and the secondary level semiconductor die based on the height of the primary and secondary conductive pillars.

2 more elements

A method for forming multi-height conductive pillars on a semiconductor die, the method comprising:

applying a first photoresist mask to a surface of the semiconductor die, the photoresist mask having a first resist opening configured to partially form a primary conductive pillar and a second resist opening configured to form a secondary conductive pillar;
electrochemically plating metal by an electrochemical plating process onto the semiconductor die through the first resist opening to partially form the primary conductive pillar to a first height and through the second resist opening to form the secondary conductive pillar to the first height;
removing the first photoresist mask from the semiconductor die to expose the partial primary conductive pillar and the secondary conductive pillar;
applying a second photoresist mask to the surface of the semiconductor die covering the secondary conductive pillar, the photoresist mask having a third resist opening aligned with the partial primary pillar and configured to partially form the primary conductive pillar;
electrochemically plating metal by an electrochemical plating process onto the semiconductor die through the third resist opening to partially form the primary conductive pillar to a second height greater than the first height;
and
removing the second photoresist mask from the semiconductor die to expose the primary conductive pillar extending to the second height and the secondary conductive pillar extending to the first height.

4 more elements

A method of making a semiconductor assembly with multi-height conductive pillars, comprising:

applying a first photoresist mask to a surface of a first semiconductor die, the photoresist mask having a first resist opening configured to form a primary conductive pillar and a second resist opening configured to form a secondary conductive pillar;
electrochemically plating metal by an electrochemical plating process onto the first semiconductor die through the first resist opening to form the primary conductive pillar to a first height and through the second resist opening to form the secondary conductive pillar to a second height;
removing the first photoresist mask from the first semiconductor die to expose the partial primary conductive pillar and the secondary conductive pillar;
electrically coupling the first semiconductor die to a substrate via the primary pillars;
and
electrically coupling the first semiconductor die to a second semiconductor die via the secondary pillars.

3 more elements

Dependencies are inferred from the claim text.

Multi-height interconnect structures and associated systems and methods

Life of this patent

Multi-height interconnect structures and associated systems and methods

Life of this patent

Abstract

Claims19