Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming a rear-surface metal layer including gold (Au) on a rear surface of a semiconductor chip;
• forming a solder blocking metal layer including at least one of nickel-chrome (NiCr), nickel (Ni) and titanium (Ti) on a part of the rear-surface metal layer;
• and
• attaching a surface including the rear-surface metal layer and the solder blocking layer of the semiconductor chip to a mounting substrate with an AuSn solder.

A method of manufacturing a semiconductor device, comprising:

• forming a solder blocking metal layer including at least one of nickel-chrome (NiCr), nickel (Ni) and titanium (Ti) on a rear surface of a semiconductor chip;
• forming a rear-surface metal layer including gold (Au) on the rear surface of a semiconductor chip including the solder blocking metal layer;
• exposing the solder blocking metal layer from the rear-surface metal layer;
• and
• attaching a surface including the rear-surface metal layer and the solder blocking layer of the semiconductor chip to a mounting substrate with an AuSn solder layer.