Semiconductor device and method of fabricating the same

A semiconductor device, comprising:

• a first dielectric layer comprising a first pad;
• a second dielectric layer on the first dielectric layer;
• a through electrode that penetrates the second dielectric layer and is electrically connected to the first pad;
• an upper passivation layer on the second dielectric layer;
• a second pad on the upper passivation layer;
• and
• a solder ball on the second pad,
• wherein the second pad comprises:
• a first part on the upper passivation layer;
• and
• a second part that extends from the first part into the upper passivation layer and is electrically connected to the through electrode,
• wherein the solder ball is on the first part of the second pad.

A semiconductor device, comprising:

• a first dielectric layer comprising a first pad that comprises a first material;
• a second dielectric layer on the first dielectric layer;
• a through electrode that penetrates the second dielectric layer and is electrically connected to the first pad;
• an upper passivation layer on the second dielectric layer;
• a second pad on the upper passivation layer;
• and
• an upper barrier layer between the upper passivation layer and the second pad,
• wherein the through electrode comprises the first material,
• wherein the second pad comprises a second material different from the first material of the first pad and the through electrode, and
• wherein the second pad does not include the first material.