Method for fabricating semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChiu-Hsiang CHEN, Shih-Chun HUANG, Yung-Sung YEN, Ru-Gun LIU
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Abstract
A method for fabricating a semiconductor device is provided. The method includes forming an alignment mark in a material layer, wherein the alignment mark has a step sidewall in the material layer, and the step sidewall of the alignment mark has a floor surface portion; forming a feature material over the material layer; and performing a planarization process at least on the feature material, wherein the planarization process stops at a level higher than the floor surface portion of the step sidewall of the alignment mark.
Claims20
A method, comprising:
- forming an alignment mark in a material layer, wherein the alignment mark has a step sidewall in the material layer, and the step sidewall of the alignment mark has a floor surface portion;
- forming a feature material over the material layer;
- and
- performing a planarization process at least on the feature material, wherein the planarization process stops at a level higher than the floor surface portion of the step sidewall of the alignment mark.
A method, comprising:
- etching a first recess and a second recess in a top surface of a material layer;
- etching a third recess in a bottom surface of the first recess, wherein the third recess is narrower than the first recess, and the first recess and the third recess form an alignment mark;
- overfilling the second recess with a feature material;
- and
- removing an upper portion of the feature material that is higher than the top surface of the material layer.
A method, comprising:
- forming an alignment mark in a material layer, wherein the alignment mark has a sidewall having a upper portion extending downwards from a top surface of the material layer, a middle portion with first and second ends and extending starting from the first end thereof laterally from a bottom end of the upper portion and a lower portion extending downwards from the second end of the middle portion;
- forming a feature material over the material layer;
- and
- performing a planarization process at least on the feature material, wherein a top surface of the feature material is higher than a top end of the lower portion of the sidewall of the alignment mark after the planarization process.
Dependencies are inferred from the claim text.