Semiconductor structure and manufacturing method thereof

A manufacturing method of a semiconductor structure, comprising:

• forming a redistribution structure having a first side and a second side, forming the redistribution structure comprising covering a first under-bump metallization (UBM) pattern by a first dielectric layer to form the first side with a planar surface;
• forming a conductive terminal on the second side of the redistribution structure;
• coupling a circuit substrate to the redistribution structure through a conductive joint formed on the first UBM pattern at the first side of the redistribution structure;
• and
• forming an insulating encapsulation on the redistribution structure to cover the circuit substrate.

A manufacturing method of a semiconductor structure, comprising:

• forming a redistribution structure within a plurality of circuit regions;
• forming a plurality of conductive terminals on a side of the redistribution structure within each of the plurality of circuit regions;
• coupling a plurality of circuit substrates to an opposing side of the redistribution structure, wherein at least one of the plurality of circuit substrates is disposed within each of the plurality of circuit regions;
• and
• forming an insulating encapsulation on the opposing side of the redistribution structure to cover the plurality of circuit substrates, wherein other region besides the plurality of circuit regions is blocked so that the insulating encapsulation is formed in the plurality of circuit regions.