Semiconductor package and manufacturing method thereof

A semiconductor package, comprising:

• a first semiconductor die;
• a second semiconductor die;
• an encapsulant, laterally encapsulating the first semiconductor die and the second semiconductor die;
• a redistribution structure, disposed over a top surface of the encapsulant, electrically connected to the first semiconductor die and the second semiconductor die;
• connective terminals, disposed on an opposite side of the redistribution structure with respect to the first semiconductor die and the second semiconductor die;
• and
• a buffer layer, disposed between the encapsulated first semiconductor die and second semiconductor die on one side and the redistribution structure on an opposite side, the buffer layer comprising:
• a high-modulus dielectric layer;
• and
• through vias extending through the high-modulus dielectric layer and electrically connecting the first semiconductor die and the second semiconductor die to the redistribution structure,
• wherein a ratio of an elastic modulus of the high-modulus dielectric layer to an elastic modulus of the encapsulant is in a range from 0.5 to 3.

A manufacturing method of a semiconductor package, comprising:

• encapsulating semiconductor dies in an encapsulant, each semiconductor die having contact posts exposed at a level height of a top surface of the encapsulant;
• forming through vias on the contact posts of the encapsulated semiconductor dies;
• wrapping the through vias in a high-modulus dielectric layer;
• and
• forming a redistribution structure having a dielectric layer on the high-modulus dielectric layer,
• wherein the redistribution structure is electrically connected to the semiconductor dies via the through vias,
• an elastic modulus of the dielectric layer is lower than an elastic modulus of the high-modulus dielectric layer, and
• an elastic modulus of the high-modulus dielectric layer is about 0.5 to 3 times an elastic modulus of the encapsulant.