Novel Structures for Tuning Threshold Voltage
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Yu Chen, Chung-Liang Cheng
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Abstract
A semiconductor device includes a first gate structure that includes a first interfacial layer, a first gate dielectric layer disposed over the first interfacial layer, and a first gate electrode disposed over the first gate dielectric layer. The semiconductor device also includes a second gate structure that includes a second interfacial layer, a second gate dielectric layer disposed over the second interfacial layer, and a second gate electrode disposed over the second gate dielectric layer. The first interfacial layer contains a different amount of a dipole material than the second interfacial layer.
Claims20
A device, comprising:
- a substrate;
- an interfacial layer formed over the substrate, wherein the interfacial layer has a dipole-penetrated portion;
- a gate dielectric layer formed over the interfacial layer;
- and
- a metal gate electrode formed over the gate dielectric layer.
A device, comprising:
- a first gate structure that includes a first interfacial layer, a first gate dielectric layer disposed over the first interfacial layer, and a first gate electrode disposed over the first gate dielectric layer;
- and
- a second gate structure that includes a second interfacial layer, a second gate dielectric layer disposed over the second interfacial layer, and a second gate electrode disposed over the second gate dielectric layer;
- wherein the first interfacial layer contains a different amount of a dipole material than the second interfacial layer.
A method, comprising:
- forming a mask layer over a first interfacial layer (IL) for a first gate structure and over a second IL for a second gate structure;
- patterning the mask layer to remove a portion of the mask layer formed over the first IL;
- forming a dipole layer, wherein a first portion of the dipole layer is formed directly on the first IL, and wherein a second portion of the dipole layer is formed on a remaining portion of the mask layer disposed over the second IL;
- and
- performing a dipole drive-in process to drive in a material of the dipole layer into the first IL and the second IL.
Dependencies are inferred from the claim text.