Localized etch stop layer

A method comprising:

• providing a plurality of fins over a substrate and a plurality of dummy gates over the plurality of fins;
• forming epitaxial regions over each of the plurality of fins, the epitaxial regions extending between adjacent ones of the plurality of dummy gates;
• forming localized etch stop regions covering the epitaxial regions, the localized etch stop regions being formed locally only over the epitaxial regions without covering the plurality of dummy gates;
• depositing a global etch stop layer over the substrate, the global etch stop layer covering the plurality of dummy gates and the localized etch stop regions;
• depositing an insulating material over the global etch stop layer;
• converting the plurality of dummy gates to a plurality of metal gates;
• using a contact opening mask, removing an underlying portion of the insulating material to expose an underlying portion of the global etch stop layer;
• removing the underlying portion of the global etch stop layer by a plasma etch process;
• and
• removing the localized etch stop regions.

A semiconductor device comprising:

• a fin disposed over a semiconductor substrate;
• an isolation region disposed proximate to the fin;
• a metal gate disposed over the fin;
• a raised source/drain region disposed over the fin, the top surface comprising a contact area and remaining area;
• a metal based etch stop layer disposed over the raised source/drain region, the metal based etch stop layer covering substantially all of the remaining area of the top surface of the raised source/drain region;
• and
• a nitride etch stop layer disposed over the metal based etch stop layer and the isolation region, the nitride etch stop layer contacting the isolation region and separated from the remaining area of the top surface by the metal based etch stop layer.