Processes for Reducing Leakage and Improving Adhesion
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYun Chen Hsieh, Hui-Jung Tsai, Hung-Jui Kuo, Chen-Hua Yu
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYun Chen Hsieh, Hui-Jung Tsai, Hung-Jui Kuo, Chen-Hua Yu
Estimating the term…
A method includes forming a metal seed layer on a dielectric layer, and forming a patterned mask over the metal seed layer. An opening in the patterned mask is over a first portion of the dielectric layer, and the patterned mask overlaps a second portion of the dielectric layer. The method further includes plating a metal region in the opening, removing the patterned mask to expose portions of the metal seed layer, etching the exposed portions of the metal seed layer, performing a plasma treatment on a surface of the second portion of the dielectric layer, and performing an etching process on the surface of the second portion of the dielectric layer.
A method comprising:
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Dependencies are inferred from the claim text.