Semiconductor device and method of manufacture

A method, comprising:

• forming a first dielectric layer;
• forming a first conductive line in the first dielectric layer;
• removing a portion of the first conductive line to define a conductive pillar;
• forming a second dielectric layer laterally adjacent the conductive pillar;
• removing a portion of the conductive pillar and a portion of the first conductive line to define a via recess in the second dielectric layer;
• forming a third dielectric layer over the second dielectric layer and in the via recess;
• forming a trench in the third dielectric layer;
• removing a first portion of the third dielectric layer in the via recess exposed by the trench;
• and
• forming a conductive material in the trench and the via recess to define a second conductive line and a conductive via electrically coupling the second conductive line to the first conductive line,
• wherein a second portion of the third dielectric layer remaining in the via recess is positioned between a sidewall surface of the conductive via and the second dielectric layer.

A method, comprising:

• forming a first dielectric layer within a recess defined by a second dielectric layer;
• removing a first portion of the first dielectric layer within the recess to define a via opening;
• and
• forming a conductive material in the via opening to define a conductive via, wherein a first sidewall of the second dielectric layer is spaced apart from a first sidewall of the conductive via by a second portion of the first dielectric layer that remains within the recess after the first portion of the first dielectric layer is removed.