Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability

A multilayer structure comprising:

• a single crystal silicon wafer handle substrate comprising two major, generally parallel surfaces, one of which is a front surface of the single crystal silicon wafer handle substrate and the other of which is a back surface of the single crystal silicon wafer handle substrate, a circumferential edge joining the front and back surfaces of the single crystal silicon wafer handle substrate, and a central plane of the single crystal silicon wafer handle substrate between the front and back surfaces of the single crystal silicon wafer handle substrate, wherein the single crystal silicon wafer handle substrate has a bulk resistivity of at least about 5000 ohm-cm, an interstitial oxygen concentration of less than about 1×1016 atoms/cm3, and a nitrogen concentration of at least about 1×1013 atoms/cm3;
• a trap rich layer in interfacial contact with the front surface of the single crystal silicon wafer handle substrate;
• a dielectric layer in interfacial contact with the trap rich layer;
• and
• a single crystal semiconductor device layer in interfacial contact with the dielectric layer;
• wherein the multilayer structure demonstrates a second harmonic distortion, HD2, value better than −90 dBm at a radiofrequency input power of 15 dBm.