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US 2021/0242036 A1Published application
Method for etching oxide semiconductor film and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsMasahiro YAMAZAKI, Shigeru Tahara
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Abstract
A method for etching an oxide semiconductor film includes: providing a substrate including a mask of a silicon-containing film on an oxide semiconductor film containing at least indium (In), gallium (Ga), and zinc (Zn); supplying a processing gas containing a bromine (Br)-containing gas or an iodine (I)-containing gas; and etching the oxide semiconductor film by plasma generated from the processing gas.
Claims13
A method for etching an oxide semiconductor film, the method comprising:
- providing a substrate including a mask of a silicon-containing film on an oxide semiconductor film containing at least indium (In), gallium (Ga), and zinc (Zn);
- supplying a processing gas containing a bromine (Br)-containing gas or an iodine (I)-containing gas;
- and
- etching the oxide semiconductor film by plasma generated from the processing gas.
1 more element
A plasma processing apparatus comprising:
- a chamber;
- a stage provided in the chamber and configured to support a substrate;
- a gas source configured to supply gas into the chamber;
- and
- a controller,
- wherein the controller is configured to:
- provide the substrate including a mask of a silicon-containing film on an oxide semiconductor film containing at least indium (In), gallium (Ga), and zinc (Zn),
- supply a processing gas containing a bromine (Br)-containing gas or an iodine (I)-containing gas from the gas source, and
- etch the oxide semiconductor film by plasma generated from the processing gas.
6 more elements
Dependencies are inferred from the claim text.