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US 2021/0242035 A1Published application
Methods for processing semiconductor wafers having a polycrystalline finish
AssigneeGlobalWafers Co., Ltd.
InventorsAlexis Grabbe, Hui Wang, Alex Chu
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Abstract
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. A first slurry is applied to the semiconductor wafer and the silicon layer is polished to smooth the silicon layer. A second slurry is applied to the semiconductor wafer. The second slurry includes a greater amount of a caustic agent than the first slurry.
Claims8
A method of processing a semiconductor wafer comprising:
- depositing a silicon layer on the semiconductor wafer;
- positioning the semiconductor wafer on a circular polishing pad of a first wafer polishing apparatus;
- polishing the silicon layer with a first slurry while the semiconductor wafer is positioned on the circular polishing pad of the first wafer polishing apparatus while the circular polishing pad rotates such that a first portion of the silicon layer is removed, the first slurry being free of caustic agent;
- positioning the semiconductor wafer on a second wafer polishing apparatus;
- and
- polishing the silicon layer with a second slurry comprising a caustic agent while the semiconductor wafer is positioned on the second wafer polishing apparatus such that a second portion of the silicon layer is removed.
3 more elements
Dependencies are inferred from the claim text.