Sintering method using a sacrificial layer on the backside metallization of a semiconductor die

A method for fabricating an electronic device, the method comprising:

• providing a semiconductor die;
• disposing a layer stack on the semiconductor die, the layer stack comprising one or more functional layers, wherein the layer stack comprises a protection layer which is an outermost functional layer of the layer stack;
• and
• disposing a sacrificial layer on the protection layer, wherein the sacrificial layer comprises a material which decomposes or becomes volatile at a temperature between 100° and 400° C.

A method for fabricating an electronic module, the method comprising:

• providing a carrier;
• providing an electronic device comprising a semiconductor die, a layer stack comprising disposed on the semiconductor die and comprising one or more functional layers, wherein the layer stack comprises a protection layer which is an outermost functional layer of the layer stack, and a sacrificial layer disposed on the protection layer, wherein the sacrificial layer comprises a material which itself decomposes or becomes volatile at a temperature between 100° and 400° C. or which decomposes or becomes volatile at a temperature between 100° C. and 400° C. when or after reacting with oxygen or oxygen compounds;
• applying a sinter paste to a main surface of the carrier;
• and
• sintering the electronic device onto the carrier at a temperature between 100° C. and 400° C. in such a way that the sacrificial layer itself is completely decomposed or becomes volatile or which decomposes or becomes volatile at a temperature between 100° C. and 400° C. when or after reacting with oxygen or oxygen compounds.