Gate electrode and method for manufacturing the same, and method for manufacturing array substrate

Abstract

A gate electrode and a method for manufacturing the same, and a method for manufacturing an array substrate are provided. The method for manufacturing a gate electrode may include: providing a substrate, wherein the substrate includes a gate electrode region and a non-gate electrode region; and forming a gate electrode layer on the substrate, wherein the gate electrode layer includes a conductive portion corresponding to the gate electrode region and a transparent portion corresponding to the non-gate electrode region. According to the gate electrode and the method for manufacturing the same, and the method for manufacturing an array substrate, step difference can be eliminated, thereby avoiding an influence of the step difference on the crystallization property of a polysilicon material when an Excimer Laser Annealing (ELA) process is performed on the amorphous silicon layer, and obtaining a better crystallization effect.

Dependencies are inferred from the claim text.