Substrate processing method, modification device and substrate processing system
AssigneeTokyo Electron Limited
InventorsNorifumi Kohama, Takayuki Ishii
Life of this patent
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Abstract
A substrate processing method of processing a substrate includes: forming a modification layer at least on a surface layer of a rear surface of the substrate or within the substrate by radiating a laser beam; and processing a front surface of the substrate in a state that the rear surface of the substrate is held. A modification device includes a laser irradiation unit configured to form a modification layer at least on a surface layer of the rear surface of the substrate or within the substrate by radiating a laser beam.
Claims12
A substrate processing method of processing a substrate, comprising:
- forming a modification layer at least on a surface layer of a rear surface of the substrate or within the substrate by radiating a laser beam;
- and
- processing a front surface of the substrate in a state that the rear surface of the substrate is held.
(canceled)
A substrate processing system configured to process a substrate, comprising:
- a modification device equipped with a laser irradiation unit configured to form a modification layer at least on a surface layer of a rear surface of a first substrate or within the first substrate by radiating a laser beam;
- a bonding device configured to bond a front surface of the first substrate in which the modification layer is formed and a front surface of a second substrate to each other;
- and
- a transfer device configured to transfer the first substrate and the second substrate to the modification device and the bonding device.
(canceled)
Dependencies are inferred from the claim text.