Method of manufacturing semiconductor device, recording medium, and substrate processing apparatus

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:

• (a) supplying a molybdenum-containing gas containing molybdenum and oxygen to a substrate in a process chamber of the substrate processing apparatus;
• (b) supplying an additive gas containing hydrogen to the substrate;
• and
• (c) supplying a reducing gas containing hydrogen and having a chemical composition different from that of the additive gas to the substrate,
• wherein at least two of (a), (b), and (c) are performed simultaneously or to partially overlap with each other in time one or more times or (a), (b), and (c) are performed sequentially one or more times to form a molybdenum film on the substrate.

A substrate processing apparatus comprising:

• a process chamber configured to accommodate a substrate;
• a gas supply system configured to supply a molybdenum-containing gas containing molybdenum and oxygen, an additive gas containing hydrogen, and a reducing gas containing hydrogen and having a chemical composition different from that of the additive gas into the process chamber, respectively;
• an exhaust system configured to exhaust an interior of the process chamber;
• and
• a controller configured to be capable of controlling the gas supply system and the exhaust system to perform a process on the substrate accommodated in the process chamber, the process comprising:
• (a) supplying the molybdenum-containing gas;
• (b) supplying the additive gas;
• and
• (c) supplying the reducing gas,
• wherein at least two of (a), (b), and (c) are performed simultaneously or to partially overlap with each other in time one or more times or (a), (b), and (c) are performed sequentially one or more times to form a molybdenum film on the substrate.