Method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:

• (a) loading a substrate with an oxide film formed thereon into a process chamber wherein a metal-containing film is formed on a wall or other location in the process chamber;
• (b) supplying into the process chamber with at least one among:
• a gas containing a group 14 element and hydrogen;
• and a gas containing oxygen;
• and
• (c) forming the metal-containing film on the substrate after (b).

A substrate processing apparatus comprising:

• a process chamber in which a metal-containing film is formed;
• a transfer system configured to load a substrate into the process chamber;
• a gas supply system configured to supply into the process chamber with a metal-containing gas or at least one among:
• a gas containing a group 14 element and hydrogen;
• and a gas containing oxygen;
• an exhaust system configured to exhaust an inside of the process chamber;
• and
• a controller configured to control the transfer system, the gas supply system and the exhaust system to perform:
• (a) loading the substrate with an oxide film formed thereon into the process chamber;
• (b) supplying into the process chamber with at least one among:
• the gas containing the group 14 element;
• and hydrogen and the gas containing oxygen;
• and
• (c) forming the metal-containing film on the substrate after (b).