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AssigneeNewSouth Innovations Pty Limited
InventorsMichelle SIMMONS, Joris KEIZER
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The present disclosure is directed to a methodology for embedding a deterministic number of dopant atoms in a surface portion of a group IV semiconductor lattice. The methodology comprises the steps of: forming one or more lithographic sites on the surface portion; dosing, at a temperature below 100 K, the surface portion using a gas with molecules comprising the dopant atom and hydrogen atoms in a manner such that, a portion of the molecules bonds to the surface portion; and incorporating one or more dopant atoms in a respective lithographic site by transferring an amount of energy to the dopant atoms. The number of dopant atoms incorporated in a lithographic site is deterministic and related to the size of the lithographic site.
A method for embedding a deterministic number of dopant atoms in a surface portion of a group IV semiconductor lattice, the method comprising the steps of:
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The method of claim 12, wherein during the step of annealing the bonded PH3 molecules lose one hydrogen atom, or wherein during the step of annealing, PH2 molecules bond with an additional hydrogen atom and are released from the surface portion.
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The method of claim 12, wherein the step of annealing the surface portion is performed in two phases:
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Dependencies are inferred from the claim text.