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US 2021/0242017 A1Published application
Semiconductor wafer
AssigneeSumitomo Chemical Company, Limited
InventorsTaiki YAMAMOTO, Keitaro IKEJIRI
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Abstract
One embodiment of the present invention provides a semiconductor wafer 1 which is provided with: a substrate 10 that is mainly composed of Si, a buffer layer 11 that is formed on the substrate 10 and comprises an AlN layer 11a as the lowermost layer; and a nitride semiconductor layer 12 that is formed on the buffer layer 11 and contains Ga. This semiconductor wafer 1 is configured such that the pit density of the upper surface of the AlN layer 11a is more than 0 but less than 2.4×1010 cm−2.
Claims3
A semiconductor wafer, comprising:
- a substrate mainly composed of Si;
- a buffer layer formed over the substrate and comprises an AlN layer as a lowermost layer;
- and
- a nitride semiconductor layer formed over the buffer layer and includes Ga,
- wherein the semiconductor wafer is configured in such a manner that a pit density of an upper surface of the AlN layer is more than 0 but less than 2.4×1010 cm−2.
2 more elements
Dependencies are inferred from the claim text.