Methods for pressure ramped plasma purge

A deposition method comprising:

• forming a plasma of a silicon-containing precursor and an oxygen-containing precursor within a processing region of a semiconductor processing chamber, wherein the processing region houses a semiconductor substrate on a substrate support;
• depositing material on the semiconductor substrate to a target thickness, wherein the depositing is performed at a first processing pressure;
• halting delivery of the silicon-containing precursor while maintaining the plasma with the oxygen-containing precursor;
• and
• purging the processing region of the semiconductor processing chamber, wherein purging the processing region of the semiconductor processing chamber comprises:
• reducing processing pressure from the first processing pressure to a second processing pressure over a period of time.

A deposition method comprising:

• forming a plasma of a silicon-containing precursor and an oxygen-containing precursor within a processing region of a semiconductor processing chamber, wherein the processing region houses a semiconductor substrate on a substrate support;
• depositing material on the semiconductor substrate to a target thickness, wherein the depositing is performed at a first processing pressure;
• halting delivery of the silicon-containing precursor while maintaining the plasma with the oxygen-containing precursor;
• and
• purging the processing region of the semiconductor processing chamber, wherein purging the processing region of the semiconductor processing chamber comprises:
• increasing an angle of a throttle valve of a purge line of the semiconductor processing chamber to reduce processing pressure from the first processing pressure to a second processing pressure over a period of time.