Patterned structure
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsFeng-Yi Chang, Fu-Che Lee
Life of this patent
Estimating the term…
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AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsFeng-Yi Chang, Fu-Che Lee
Estimating the term…
A patterning method includes the following steps. A mask layer is formed on a material layer. A first hole is formed in the mask layer by a first photolithography process. A first mask pattern is formed in the first hole. A second hole is formed in the mask layer by a second photolithography process. A first spacer is formed on an inner wall of the second hole. A second mask pattern is formed in the second hole after the step of forming the first spacer. The first spacer surrounds the second mask pattern in the second hole. The mask layer and the first spacer are removed. The pattern of the first mask pattern and the second mask pattern are transferred to the material layer by an etching process.
A patterned structure, comprising:
Dependencies are inferred from the claim text.