Gridless ion mirrors with smooth fields
AssigneeMicromass UK Limited
InventorAnatoly Verenchikov
Life of this patent
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AssigneeMicromass UK Limited
InventorAnatoly Verenchikov
Estimating the term…
An ion mirror 41 constructed of thin electrodes that are interconnected by resistive dividers 45 with potentials U1-U5 applied to knot electrodes to form segments 41-43 of linear potential distribution between the “knot” electrodes, yet without separating those field regions by meshes. Weak and controlled penetration of electric fields provide for a fine control over the field non linearity and over the equipotential line curvature, thus allowing to reach unprecedented level of ion optical quality: more than twice larger energy acceptance compared to thick electrode mirrors, up to sixth order time per energy focusing, ion spatial focusing and wide spatial acceptance. Novel mirrors can be formed very slim to arrange them into stacks for ion transverse displacement between ion reflections or for multiplexed mirror stacks. Printed circuit boards (PCB) are best suited for making novel ion mirrors, while novel ion mirrors are designed to suit PCB requirements.
An ion mirror for reflecting ions along an axis (X) comprising:
The ion mirror of any preceding claim, comprising voltage supplies and configured to apply electric potentials to the electrodes of the first axial segment for generating a first linear electric field (E2) of a first strength within the first axial segment, and to apply electric potentials to electrodes of the second axial segment for generating a second linear electric field (E3) of a second strength within the second axial segment;
The ion mirror of any preceding claim, comprising a third axial segment (E1) adjacent to the first axial segment (E2) in a direction along said axis (X);
The ion mirror of any preceding claim, wherein the length of the first axial segment along said axis is ≤5H;
The ion mirror of any preceding claim, comprising voltage supplies and configured to apply electric potentials to the electrodes of the first axial segment for generating a first linear electric field (E2) of a first strength within the first axial segment, and to apply electric potentials to electrodes of the second axial segment for generating a second linear electric field (E3) of a second, different strength within the second axial segment;
The ion mirror of any preceding claim, wherein the mirror has voltage supplies and is configured to apply electric potentials to the electrodes of the first axial segment for generating a first linear electric field of a first strength E2 within the first axial segment, wherein 4.3U0/D<E2<5U0/D, where U0 is equal to a mean energy K0 of an ion to be reflected in the mirror divided by the charge q of that ion, and D is the distance from the mean ion turning point to a first order energy focusing time focal point of the mirror.
The ion mirror of any preceding claim, further comprising an entrance lens, the entrance lens optionally comprising one of the group:
The ion mirror of any preceding claim, wherein at least some of the electrodes of the ion mirror are conductive strips of a printed circuit board (PCB).
An ion mirror for reflecting ions along an axis (X) comprising:
An ion mirror for reflecting ions along an axis (X) comprising:
A mass spectrometer comprising:
A method of mass spectrometry comprising:
Within time-of-flight, or multi-reflecting time-of-flight, or isochronous electrostatic trap mass spectrometers, an isochronously reflecting gridless ion mirror, comprising:
An ion mirror for reflecting ions in an X-direction, comprising:
A multi-reflecting time-of-flight mass spectrometer with at least two ion mirrors comprising:
A method of forming electrostatic field of ion mirror comprising the following steps:
Dependencies are inferred from the claim text.