Plasma processing apparatus and inner component of plasma processing apparatus and manufacturing method of inner component of plasma processing apparatus

An inner component of a plasma processing apparatus, the inner component being placed in an inside of a processing chamber of the plasma processing apparatus that processes a wafer that is a processing target placed in the processing chamber in an inside of a vacuum chamber using plasma formed from a processing gas supplied to the inside of the processing chamber,

• wherein:
• a surface of the inner component that faces the plasma is made of a dielectric material;
• and
• the dielectric material includes
• a first material that combines with the supplied processing gas and is volatilized and
• a second material that combines with the processing gas to produce a non-volatile compound, a volume of the non-volatile compound being increased before the combination.

A manufacturing method for an inner component that is placed in a processing chamber in an inside of a vacuum chamber of a plasma processing apparatus that processes a wafer that is a processing target using plasma formed from a processing gas supplied to an inside of the processing chamber,

• wherein:
• on a surface of the inner component, a dielectric material is formed in advance, the dielectric material including
• a first material that combines with the supplied processing gas and is volatilized and
• a second material that combines with the processing gas to produce a non-volatile compound, a volume of the non-volatile compound being increased before the combination;
• and
• before the wafer is processed, a step of exposing a surface of the inner component to the plasma formed by supplying the processing gas to the inside of the processing chamber for a predetermined time to alter the surface.