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US 2021/0241934 A1Published application
CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING THE SAME
AssigneeSumitomo Electric Industries, Ltd.
InventorsTakashi Sakurada, Tomohiro Kawase
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Abstract
An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017 cm−3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm−2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10−2 cm2 or at least 1×10−3 cm2.
Claims20
1-6. (canceled)
7:
- A conductive GaAs single crystal substrate cut from a conductive GaAs single crystal, comprising:
- a polished mirror surface;
- an atomic concentration of Si being more than 1×1017 cm−3;
- and
- a density of precipitates having sizes of at least 30 nm being at most 400 cm−2;
- wherein
- on the polished mirror surface a density of microscopic defects having sizes of at least 0.265 μm measured by a surface particle inspection device is at most 0.3 cm−2.
4 more elements
8:
- The conductive GaAs single crystal substrate according to claim 7, wherein the density of precipitates having sizes of at least 30 nm contained in the substrate is at most 300 cm−2.
9:
- The conductive GaAs single crystal substrate according to claim 8, wherein in the mirror surface the density of microscopic defects having sizes of at least 0.265 μm measured by the surface particle inspection device is at most 0.1 cm−2.
10:
- The conductive GaAs single crystal substrate according to claim 7, wherein
- the density of precipitates having sizes of at least 30 nm contained in the substrate is at most 100 cm−2 and
- in the mirror surface the density of microscopic defects having sizes of at least 0.265 μm measured by the surface particle inspection device is at most 0.1 cm−2.
11:
- The conductive GaAs single crystal substrate according to claim 7, wherein the density of precipitates is measured by an infrared-ray scattering.
12:
- The conductive GaAs single crystal substrate according to claim 7, wherein a dislocation density of the substrate is at most 5×102 cm−2 or at least 1×103 cm−2.
13:
- The conductive GaAs single crystal substrate according to claim 12, wherein the dislocation density of the substrate is at most 2×102 cm−2.
14:
- The conductive GaAs single crystal substrate according to claim 7, wherein a diameter of the substrate is 4-inch.
15:
- The conductive GaAs single crystal substrate according to claim 7, wherein a diameter of the substrate is 6-inch.
16:
- The conductive GaAs single crystal substrate according to claim 7, wherein the substrate is for a laser device.
17:
- The conductive GaAs single crystal substrate according to claim 7, further comprising an epitaxial layer stacked thereon.
18:
- The conductive GaAs single crystal substrate according to claim 17, wherein a dislocation density of the substrate is at most 5×102 cm−2 or at least 1×103 cm−2.
19:
- The conductive GaAs single crystal substrate according to claim 17, wherein a dislocation density of the substrate is at most 2×102 cm−2.
20:
- The conductive GaAs single crystal substrate according to claim 17, wherein a diameter of the substrate is 4-inch.
21:
- The conductive GaAs single crystal substrate according to claim 17, wherein a diameter of the substrate is 6-inch.
22:
- The conductive GaAs single crystal substrate according to claim 17, wherein the substrate is for a laser device.
23:
- A laser device comprising:
- the conductive GaAs single crystal substrate according to claim 7;
- and
- an epitaxial layer stacked on the conductive GaAs single crystal substrate.
1 more element
24:
- The laser device according to claim 23, wherein a dislocation density of the substrate is at most 5×102 cm−2 or at least 1×103 cm−2.
25:
- The laser device according to claim 23, wherein a dislocation density of the substrate is at most 2×102 cm−2.