Assisted write method for magnetic random access memory

A method of manufacturing a semiconductor device, comprising:

• forming a magnetic random access memory cell;
• and
• writing to the magnetic random access memory cell, wherein the writing to the magnetic random access memory cell, comprises:
• applying a first alternating current signal to one of a word line or source line of the magnetic random access memory cell,
• wherein a first frequency of the first alternating current signal is below a frequency threshold value for causing precession of a free layer of the magnetic random access memory cell;
• applying a second alternating current signal to another of the word line or source line of the magnetic random access memory cell,
• wherein a second frequency of the second alternating current signal is below the frequency threshold value for causing precession of the free layer of the magnetic random access memory cell, and
• a combined frequency of the first frequency and the second frequency is greater than a threshold value for causing precession of the free layer of the magnetic random access memory cell;
• and
• applying a direct current pulse to the magnetic random access memory cell while applying the first alternating current signal and the second alternating current signal to the magnetic random access memory cell thereby changing a magnetic orientation of the magnetic random access memory cell.

A circuit for writing to an array of magnetic random access memory cells, comprising:

• a driver configured to apply a direct current pulse to a random access memory cell;
• a first alternating current source f1 configured to apply an alternating current signal to one of a word line or source line of a magnetic random access memory cell in the array;
• and
• a second alternating current source f2 configured to apply a second alternating current signal to another of the word line or source line of the magnetic random access memory cell.

A method of writing to a magnetic random access memory cell, comprising:

• applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation by sweeping through a range of alternating current frequencies or peak voltage amplitudes of the alternating current signal;
• applying direct current pulses to the magnetic random access memory cell by sweeping through a range of peak voltage amplitudes of the direct current pulses;
• and
• changing the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation,