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US 2021/0241808 A1Published application
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsShunya NAGATA, Yoshikazu SAITO, Takeshi HASHIZUME
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Abstract
A semiconductor device includes a memory array arranged in a matrix, a plurality of word lines provided corresponding to memory cell rows, a word driver for driving one of the plurality of word lines, a plurality of row select lines connected to the word driver, and a row decoder for outputting a row select signal to the plurality of row select lines based on input row address information. According to the embodiment, the semiconductor device can detect a failure of the address decoder in a simple method.
Claims16
A semiconductor device comprising:
- a memory cell array arranged in a matrix;
- a plurality of word lines provided corresponding to each row of the matrix of the memory cell array;
- a word driver configured to drive one of the word lines;
- a plurality of row selecting lines coupled to the word driver;
- a first row encoder coupled to the word lines and configured to generate a first row address information based on signal levels of the word lines;
- a second row encoder coupled to the word lines and configured to generate a second row address information which is complementary to the first row address information;
- and
- a first row determination circuit configured to output a first row determination signal based on comparation between the first row address information and the second row address information.
5 more elements
A semiconductor device comprising:
- a memory cell array arranged in a matrix;
- a plurality of word lines provided corresponding to each row of the matrix of the memory cell array;
- a word driver configured to drive one of the word lines;
- a plurality of row selecting lines coupled to the word driver;
- a row decoder configured to output a row selecting signal to the row selecting lines based on an input row address information;
- a first data line;
- a second data line;
- a plurality of first transistors provided corresponding to each word line and between the first data line and a fixed potential line;
- a plurality of second transistors provided corresponding to each word line and between the second data line and the fixed potential line;
- a first current mirror circuit configured to drive the first data line with a first current;
- a second current mirror circuit configured to drive the second data line with a second current;
- and
- a first determination circuit configured to output a first determination signal based on the signal of the first and the second data lines,
- wherein the first and second transistors are configured to be conductive state according to the signal level of the word lines.
11 more elements
A semiconductor device comprising:
- a memory cell array arranged in a matrix;
- a plurality of word lines provided corresponding to each row of the matrix of the memory cell array;
- a word driver configured to drive one of the word lines;
- a plurality of row selecting lines coupled to the word driver;
- a row decoder configured to output a row selecting signal to the row selecting lines based on an input row address information;
- a first reference voltage generating circuit configured to generate a first reference voltage;
- a second reference voltage generating circuit configured to generate a second reference voltage;
- a first data line;
- a plurality of first transistors provided corresponding to each word line and between the first data line and a fixed potential line;
- a first sense amplifier configured to output a first comparison signal based on a voltage comparison between the first data line and the first reference voltage;
- a second sense amplifier configured to output a second comparison signal based on a voltage comparison between the first data line and the second reference voltage;
- and
- a first determination circuit configured to output the first determination result based on the first comparison signal and the second comparison signal,
- wherein the first and second transistors are configured to be conductive state according to the signal level of the word lines.
11 more elements
Dependencies are inferred from the claim text.