Semiconductor device including combination rows and method and system for generating layout diagram of same

A method of manufacturing a semiconductor device, for a layout diagram stored on a non-transitory computer-readable medium, the method comprising generating the layout diagram including:

• arranging the layout diagram into rows which extend substantially in a first direction;
• and
• configuring first and second cells for the rows including:
• generating conductive patterns for a first metallization level (M_1st level);
• relative to a second direction substantially perpendicular to the first direction, setting a first pitch as a sole pitch for the M_1st level, the first pitch being for conductive patterns;
• generating conductive patterns for a third metallization level (M_3rd level) including conductive patterns for a power grid (PG patterns) and conductive patterns for control or data signals (logic patterns);
• and
• relative to the second direction, setting multiple pitches for the M_3rd level, the multiple pitches including:
• a second pitch for logic patterns;
• and
• a third pitch for PG patterns, the third pitch being greater than the second pitch.

A semiconductor device comprising:

• cell regions arranged in rows which extend substantially in a first direction;
• one or more of the rows being combination rows, each combination row having:
• relative to a second direction substantially perpendicular to the first direction, a height substantially equal to a sum of a first height of a first cell region and a second height of a second cell region;
• the first cell region being different than the second cell region, and the first height being different than the second height;
• and
• each of the one or more combination rows including:
• relative to the second direction, a first instance of the first cell region stacked on a first instance of the second cell region;
• or
• relative to the second direction, a second instance of the second cell region stacked on a second instance of the first cell region.