Power device and resistance simulation method therefor, and power device simulation tool

A simulation method for a power device, the power device comprising:

• N finger structures, each of the finger structures comprises a source region and a drain region;
• a top metal layer, comprising a source metal strip and a drain metal strip located at a top layer;
• and
• an intermediate metal layer, comprising a first intermediate layer and a second intermediate layer, wherein the first intermediate layer connects each of the source regions to the source metal strip to lead out a common source, and the second intermediate layer connects each of the drain regions to the drain metal strip to lead out a common drain;
• the simulation method for the power device comprising:
• step A:
• acquiring a resistance of the power device, and the method for acquiring the resistance of the power device comprising:
• establishing an equivalent resistance model of the power device according to a connection relationship of the finger structures;
• wherein, the connection relationship of N fingers is equivalent to a parallel connection of N resistors Rb, current input terminals of adjacent resistors Rb are connected to each other through a resistor Ra, current output terminals of adjacent resistors Rb are connected to each other through a resistor Rc, the source is a current input terminal of a first resistor Rb, and the drain is a current output terminal of an Nth resistor Rb,
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• Rb=RDEV*N+RS+RD, wherein, R0 is a resistance of the source metal strip, R1 is a resistance of the drain metal strip, RS is a metal resistance of the first intermediate layer connecting a source region to the source metal strip, RD is a metal resistance of the second intermediate layer connecting a drain region to the drain metal strip, and RDEV is a channel resistance of the power device;
• and
• calculating a resistance of the equivalent resistance model, the resistance of the power device is the resistance of the equivalent resistance model;
• step B:
• reading the resistance of the power device and calculating a parasitic resistance of the power device, wherein the parasitic resistance of the power device is equal to the channel resistance of the power device subtracted from the resistance of the power device;
• and
• step C:
• acquiring the parasitic resistance of the power device and performing pre-simulation on the power device according to the parasitic resistance of the power device.

A simulation tool, configured to perform simulation on a power device, the power device comprising:

• N finger structures, each of the finger structures comprises a source region and a drain region;
• a top metal layer, comprising a source metal strip and a drain metal strip located at a top layer;
• and
• an intermediate metal layer, comprising a first intermediate layer and a second intermediate layer, wherein the first intermediate layer connects each of the source regions to the source metal strip to lead out a common source, and the second intermediate layer connects each of the drain regions to the drain metal strip to lead out a common drain;
• the simulation tool comprising:
• a parameterization unit, comprising an algorithm unit, the algorithm unit being configured to establish an equivalent resistance model of the power device according to a connection relationship of the N finger structures, wherein, the connection relationship of N fingers is equivalent to a parallel connection of N resistors Rb, current input terminals of adjacent resistors Rb are connected to each other through a resistor Ra, current output terminals of adjacent resistors Rb are connected to each other through a resistor Rc, the source is a current input terminal of a first resistor Rb, and the drain is a current output terminal of an Nth resistor Rb, Ra=1/NR0, Rc=1/NR1, Rb=RDEV*N+RS+RD, wherein, R0 is a resistance of the source metal strip, R1 is a resistance of the drain metal strip, RS is a metal resistance of the first intermediate layer connecting a source region to the source metal strip, RD is a metal resistance of the second intermediate layer connecting a drain region to the drain metal strip, and RDEV is a channel resistance of the power device;
• and the algorithm unit being further configured to calculate a resistance of the equivalent resistance model, the resistance of the power device is the resistance of the equivalent resistance model and a parasitic resistance of the power device is acquired according to the resistance of the power device, wherein the parasitic resistance of the power device is equal to the channel resistance of the power device subtracted from the resistance of the power device;
• and
• a pre-simulation unit, configured to read the parasitic resistance of the power device and perform pre-simulation on the power device according to the parasitic resistance.