True random number generation and physically unclonable functions using voltage control of magnetic anisotropy effects in stt-mram

A method for generating a true random number (TRN) or physically unclonable function (PUF), comprising:

• generating a stochastically tuned voltage pulse;
• applying the stochastically tuned voltage pulse to a plurality of voltage controlled magnetic anisotropy (VCMA) cells in an array of VCMA cells, wherein the stochastically tuned voltage pulse has a magnitude and duration that provides a 50%-50% switching distribution of the VCMA cells in the array of VCMA cells;
• and
• reading a state of each of the VCMA cells in the array of VCMA cells to provide the true random number (TRN) or physically unclonable function (PUF).

A system for generating a true random number (TRN) or physically unclonable function (PUF), comprising:

• a spin transfer torque magnetic random access memory (STT-MRAM), the STT-MRAM including an array of voltage controlled magnetic anisotropy (VCMA) cells;
• a voltage pulse tuning circuit for generating and applying a stochastically tuned voltage pulse to the VCMA cells in the array of VCMA cells, wherein the stochastically tuned voltage pulse has a magnitude and duration that provides a 50%-50% switching distribution of the VCMA cells in the array of VCMA cells;
• and
• a bit output system for reading a state of each of the VCMA cells in the array of VCMA cells to provide the true random number (TRN) or physically unclonable function (PUF).