Management of write operations in a non-volatile memory device using a variable pre-read voltage level

A method comprising:

• receiving a write request from a host system, the write request identifying data to be stored in a segment of a memory device;
• determining a write-to-write time interval for the segment of the memory device;
• determining whether the write-to-write time interval for the segment falls within a first write-to-write time interval range of a plurality of write-to-write time interval ranges for the memory device, wherein the first write-to-write time interval range represents a first plurality of write-to-write time intervals corresponding to a first pre-read voltage level;
• responsive to the write-to-write time interval for the segment falling within the first write-to-write time interval range, performing a pre-read operation on the segment of the memory device using the first pre-read voltage level to determine data currently stored in the segment;
• identifying a subset of the data identified in the write request to be stored in the segment of the memory device, wherein the subset of the data represents bits of data that are different than corresponding bits of the data currently stored in the segment and read during the pre-read operation;
• and
• performing a write operation to store the subset of the data in the segment of the memory device.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to:

• perform a pre-read operation on a segment of a memory device using a first pre-read voltage level to identify first data stored in the segment of the memory device, wherein the pre-read voltage level satisfies a pre-read voltage level criterion;
• compare the first data stored in the segment of the memory device and read during the pre-read operation to second data associated with a write operation to be performed on the segment of the memory device to identify at least a portion of the second data that is different than the first data;
• and
• write at least the portion of the second data associated with the write operation to the segment of the memory device.