Scattering lithography
AssigneeVathys, Inc.
InventorTapabrata Ghosh
Life of this patent
Estimating the term…
Abstract
Disclosed are systems and methods for achieving sub-diffraction limit resolutions for fabrication of integrated circuits. In one embodiment, a photolithography system is disclosed. The system includes a light source, configured to emit laser beams; a reflector configured to receive the laser beams and focus the laser beams on a condensing lens; a scattering medium, configured to receive the laser beams and generate scattered laser beams; and a wave-front shaping module, configured to receive the scattered laser beams and generate a focused laser beam on a silicon wafer.
Claims20
A photolithography system comprising:
- a light source configured to emit one or more laser beams (“laser beams”);
- a reflector configured to receive the laser beams from the light source and focus the received laser beams on a condensing lens;
- a scattering medium configured to receive the focused laser beams and generate scattered laser beams;
- a processor configured to:
- generate a transmission matrix based on an input/output response of the scattering medium;
- determine a correlation between the transmission matrix and the scattered laser beams;
- and
- based on the correlation, configure a wave-front shaping module to receive the scattered laser beams and generate a focused laser beam on a silicon wafer.
The system of claim, 1, wherein the wave-front shaping module further comprises:
- a photolithography mask, comprising integrated circuit patterns for fabrication on the silicon wafer;
- and
- a distortion compensation pattern configured to receive the scattered laser beams and generate a focused laser beam on the silicon wafer, based at least partly on the integrated circuit pattern.
(canceled)
A method of photolithography comprising:
- emitting one or more laser beams (“laser beams”) from a light source;
- reflecting, by a reflector, the laser beams emitted from the light source;
- receiving the reflected laser beams by a condensing lens;
- generating scattered laser beams by scattering the reflected laser beams by a scattering medium,
- generating a transmission matrix based on an input/output response of the scattering medium;
- determining a correlation between the transmission matrix and the scattered laser beams;
- and
- based on the correlation, configuring a wave-front shaping module to receive the scattered laser beams and generate a focused laser beam on a silicon wafer.
The method of claim, 10, wherein the wave-front shaping module further comprises:
- a photolithography mask, comprising integrated circuit patterns for fabrication on the silicon wafer;
- and
- a distortion compensation pattern configured to receive the scattered laser beams and generate a focused laser beam on the silicon wafer, based at least partly on the integrated circuit pattern.
(canceled)
A photolithography system, comprising:
- a light source configured to emit one or more laser beams (“laser beams”);
- a reflector configured to receive the laser beams from the light source and focus the received laser beams on a condensing lens;
- a scattering medium configured to receive the focused laser beams and generate scattered laser beams;
- a wave-front shaping module configured to receive the scattered laser beams and generate a focused laser beam on a silicon wafer, wherein the wave-front shaping module is further configured to receive the scattered laser beams and generate the focused laser beam based on approximation by a linear distortion matrix in one of:
- a frequency domain, a spatial domain and a basis domain.
Dependencies are inferred from the claim text.